VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV Middle Atlantic UTR1 Height Outside: Adjustable from 7

Height Outside: Adjustable from 7

Core Material: Ferrite

Non-condensing Enclosure Metal Dimensions (W x H x D) 10

Type Amber light balancing Size 58 mm Grade 81B Filter Factor 1

VISHAY SI2329DS-T1-GE3 MOSFET Transistor, P Channel, -6 A, -8 V, 0.025 ohm, -4.5 V, -350 mV Middle Atlantic UTR1 Height Outside: Adjustable from 7The SI2329DS T1 GE3 is a 8V P channel TrenchFET Power MOSFET. The surface mounted LITTLE FOOT power MOSFET uses integrated circuit and small signal packages which have been modified to provide the heat transfer capabilities required by power devices. Halogen free according to IEC 61249 2 21 definition 100% Rg Tested Applications Power Management Product details Power Dissipation Pd 2. 5W Operating Temperature Max 150C Continuous Drain Current Id 6A