DIODES INC ZTX851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 1.2 W, 5 A, 200 hFE Sensei FWM-7282 to 1600' (500 m) at

to 1600' (500 m) at full rate Ethernet: patch or crossover

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DIODES INC ZTX851 Bipolar (BJT) Single Transistor, NPN, 60 V, 130 MHz, 1.2 W, 5 A, 200 hFE Sensei FWM-7282 to 1600' (500 m) atThe ZTX851 is a 60V E Line Silicon NPN Planar Medium Power High Current Transistor with optimised chip technology to give exceptionally high current capability coupled with very low saturation voltages. Very low saturation voltage Applications Lighting Product details Power Dissipation Pd 1. 2W DC Collector Current 5A Collector Emitter Voltage V(br)ceo 60V Transition Frequency ft 130MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current