MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES Individual Volume Controls

Individual Volume Controls

Camera flash units with Versi Octa speed ring Removable Front Face Yes Removable Interior Baffle Uses included bounce disc Accepts Grids No Requires Speed Ring Yes Dimensions Diameter: 30" (76

flexible UV-PVC window allows you to see the AF/IS/VR controls and the distance-scale window Features a custom hole that reveals the red dot

Medium-range IR illuminator with SMT LED technology Illumination distance up to 80' (24m) and illumination angle up to 100� x 50� 850nm wavelength 188' (57m) horizontal field of view Low power consumption of 26W IP67 weatherproof rating Built-in photocell (IR on/off) Photocell following contact Telemetry input for remote switching Pressure equalization vent prevents thermal expansion & pressure cycling Black anodized finish Black powder-coated stainless steel wall mount

MULTICOMP BC107A Bipolar (BJT) Single Transistor, General Purpose, NPN, 45 V, 150 MHz, 600 mW, 100 mA, 110 hFE Gra-Vue MMIO EMB-HDSDI_AES Individual Volume ControlsThe BC107A is a 45V Silicon NPN Bipolar Planar Epitaxial Transistor intended for general purpose amplifier or switches. Low power Collector base voltage(Vcbo = 50V) Emitter base voltage(Vebo = 6V) Applications Industrial Product details Power Dissipation Pd 600mW DC Collector Current 100mA Collector Emitter Voltage V(br)ceo 45V Transition Frequency ft 150MHz Operating Temperature Max 200C Transistor Polarity NPN DC Current Gain hFE 110hFE No. of Pins