1460 nm to 1640 nm FBG, 20% Reflectivity PHOTODIODE/ PHOTORECEIVER The intensity modulator is designed

The intensity modulator is designed for TDM and WDM up to 25 Gb/s transmission

and R&D applications

This MEMS-based attenuator uses tilting mirror technology

high-performance component

1460 nm to 1640 nm FBG, 20% Reflectivity PHOTODIODE/ PHOTORECEIVER The intensity modulator is designedThe scattering loss is extremely low (< 0. 2 dB) even in very long arrays. Hundreds of FGBS can be integrated into a sensor array for multi point measurements over different distances up to several kilometers. Its manufacturing technology provides maximum flexibility. FEATURES Extreme stability up to 1,000C High Tensile Strength Highly Flexible Writing Technology Resistance to Moisture, Radiation and Electromagnetic Interference USE IN Temperature